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2009-04-24 rev. 2.6 page 1 SPI11N60CFD cool mos? power transistor v ds @ t jmax 650 v r ds(on) 0.44 ? i d 11 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? high peak current capability ? intrinsic fast-recovery body diode ? extreme low reverse recovery charge pg-to262 type package pb-free SPI11N60CFD pg-to262 yes marking 11n60cfd maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 11 7 a pulsed drain current, t p limited by t jmax i d puls 28 avalanche energy, single pulse i d = 5.5 a, v dd = 50 v e as 340 mj avalanche energy, repetitive t ar limited by t jmax 1) i d = 11 a, v dd = 50 v e ar 0.6 avalanche current, repetitive t ar limited by t jmax i ar 11 a reverse diode d v /d t i s =11a, v ds =480v, t j =125c d v /d t 40 v/ns gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 125 w operating and storage temperature t j , t stg -55... +150 c
2009-04-24 rev. 2.6 page 2 SPI11N60CFD maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 11 a, t j = 125 c d v /d t 80 v/ns maximum diode commutation speed v ds = 480 v, i d = 11 a, t j = 125 c d i f /d t 600 a/s thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =11a - 700 - gate threshold voltage v gs(th) i d =500 , v gs = v ds 3 4 5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 1.1 900 - - a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a, t j =25c t j =150c - - 0.38 1.02 0.44 - gate input resistance r g f =1mhz, open drain - 0.86 -
2009-04-24 rev. 2.6 page 3 SPI11N60CFD electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =7a - 8.3 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1200 - pf output capacitance c oss - 390 - reverse transfer capacitance c rss - 30 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 480v - 45 - pf effective output capacitance, 3) time related c o(tr) - 85 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =11a, r g =6.8 - 34 - ns rise time t r - 18 - turn-off delay time t d(off) - 43 - fall time t f - 7 - gate charge characteristics gate to source charge q gs v dd =480v, i d =11a - 9 - nc gate to drain charge q gd - 23 - gate charge total q g v dd =480v, i d =11a, v gs =0 to 10v - 48 64 gate plateau voltage v (p lateau ) v dd =480v, i d =11a - 7 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2009-04-24 rev. 2.6 page 4 SPI11N60CFD electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11 a inverse diode direct current, pulsed i sm - - 28 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 140 - ns reverse recovery charge q rr - 0.7 - c peak reverse recovery current i rrm - 11 - a peak rate of fall of reverse recovery current di rr / dt - 1200 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.015 k/w r th2 0.03 r th3 0.056 r th4 0.197 r th5 0.216 r th6 0.083 thermal capacitance c th1 0.0001878 ws/k c th2 0.0007106 c th3 0.000988 c th4 0.002791 c th5 0.007285 c th6 0.063 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2009-04-24 rev. 2.6 page 5 SPI11N60CFD 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spp11n60cfd p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp=0.001 ms tp=0.01 ms tp=0.1 ms tp=1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 5 10 15 20 25 30 a 40 i d vgs = 20v vgs = 10v vgs = 9v vgs = 8.5v vgs = 8v vgs = 7.5v vgs = 7v vgs = 6.5v vgs = 6v
2009-04-24 rev. 2.6 page 6 SPI11N60CFD 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 2 4 6 8 10 12 14 16 18 a 22 i d vgs = 20v vgs = 8.5v vgs = 8v vgs = 7.5v vgs = 7v vgs = 6.5v vgs = 6v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 4 8 12 16 20 a 28 i d 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 2 r ds(on) vgs = 6v vgs = 6.5v vgs = 7v vgs = 7.5v vgs = 8v vgs = 8.5v vgs = 20v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.6 spp11n60cfd r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 5 10 15 20 25 30 a 40 i d tj = 150?c tj = 25?c
2009-04-24 rev. 2.6 page 7 SPI11N60CFD 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 11 a pulsed 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 spp11n60cfd v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp11n60cfd i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 7 8 9 a 11 i ar t j (start) =125c t j (start) =25c 12 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as
2009-04-24 rev. 2.6 page 8 SPI11N60CFD 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spp11n60cfd v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 j 7.5 e oss
2009-04-24 rev. 2.6 page 9 SPI11N60CFD 17 typ. reverse recovery charge q rr = f( t j ) parameter: i d = 11a 25 50 75 c 125 t j 600 700 800 900 1000 1100 1200 q rr [nc] 18 typ. reverse recovery charge q rr = f( i d ) parameter: di/dt = 100 a/ s 1 2 3 4 5 6 7 8 9 a 11 i d 200 300 400 500 600 700 800 900 1000 1100 1200 q rr [nc] tj = 25c tj = 125c 19 typ. reverse recovery charge q rr = f( di/dt ) parameter: i d = 11 a 100 200 300 400 500 600 700 a/s 900 d i /d t 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 q rr [nc] tj = 125c tj = 25c
2009-04-24 rev. 2.6 page 10 SPI11N60CFD definition of diodes switching characteristics
2009-04-24 rev. 2.6 page 11 SPI11N60CFD pg-to-262-3-1
2009-04-24 rev. 2.6 page 12 SPI11N60CFD

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